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| 2SK2248-01L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 30V 0,06 10A 20W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate Voltage (RGS=20K) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 30 30 10 40 16 20 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V Tch=25C VGS=0V Tch=125C VGS=16V VDS=0V ID=5A VGS=4V ID=5A VGS=10V ID=5A VDS=10V VDS=25V VGS=0V f=1MHz VCC=10V ID=10A VGS=10V RGS=25 Tch=25C L=100H IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Min. 30 1,0 Typ. 1,5 10 0,2 10 0,045 0,035 10 900 600 160 10 15 110 60 1,0 35 0,05 Max. 2,0 500 1,0 100 0,080 0,060 1350 900 240 15 25 170 90 1,5 5 10 Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 6,25 Unit C/W C/W Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com N-channel MOS-FET 30V 0,06 2SK2248-01L,S F-III Series Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics 10A 20W > Characteristics Typical Output Characteristics ID [A] 1 RDS(ON) [] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(ON) [] 44 gfs [S] 5 VGS(th) [V] 6 ID [A] ID [A] Tch [C] Typical Capacitance vs. VDS Typical Input Charge Forward Characteristics of Reverse Diode C [nF] 7 VDS [V] 8 VGS [V] IF [A] 9 VDS [V] Qg [nC] VSD [V] Allowable Power Dissipation vs. TC Safe operation area Transient Thermal impedance PD [W] 10 ID [A] 12 Zth(ch-c) [K/W] Tc [C] VDS [V] t [s] This specification is subject to change without notice! |
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